| Cr缓冲层对SmCo/Cu薄膜结构及形貌的影响 |
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| 引用本文： | 方庆清,张启平,王伟娜,李金光,张瀚铭,丁琼琼,吕庆荣,刘艳美,王璨.Cr缓冲层对SmCo/Cu薄膜结构及形貌的影响[J].中国科学(G辑),2013(1):48-53. |
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| 作者姓名： | 方庆清 张启平 王伟娜 李金光 张瀚铭 丁琼琼 吕庆荣 刘艳美 王璨 |
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| 作者单位： | [1]安徽大学物理与材料科学学院,合肥230039 [2]安徽大学光电信息获取与控制教育部重点实验室,合肥230039 |
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| 基金项目： | 教育部高等学校博士学科点专项科研基金（编号：20093401110004）; 安徽省教育厅重点科研基金（编号：20110114177）资助项目 |
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| 摘 要： | 研究了不同厚度SmCo薄膜的结构以及Cr缓冲层对SmCo/Cu薄膜结构、形貌及性能的影响.结果表明,对于较厚的SmCo薄膜,延长退火时间可有效提高样品的结晶度;Cr缓冲层能够提高样品表面的平整度,降低SmCo平均晶粒尺寸,增强SmCo（002）衍射峰与Cu（111）衍射峰强度之比（R）,从而提高样品的磁性能.同时发现,SmCo/Cu薄膜的磁性能可以通过调节Cr缓冲层厚度进一步得到优化,其中通过调控缓冲层厚度提高R值,形成Cu（111）与SmCo（002）织构,是提高SmCo5/Cu薄膜磁性的关键所在.
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| 关 键 词： | SmCo薄膜 缓冲层 织构 形貌 |
Effects of Cr buffer layer on the structure and orphology of SmCo/Cu thin films |
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| Authors: | FANG QingQing ZHANG QiPing WANG WeiNa LI JinGuang ZHANG HanMing DING QiongQiong Lü QingRong LIU YanMei ＆ WANG Can |
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| Affiliation: | 1 School of Physics and Material Science, Anhui University, Hefei 230039, China; 2 Key Laboratory of Opto-electronic Information Acquisition and Manipulation Ministry of Education, Anhui University, Hefei 230039, China ) |
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| Abstract: | In this paper, we investigated the structure of SmCo films with different thickness and the effects of Cr buffer layer on the structure and morphology of SmCo/Cu thin films. Our data revealed that the degree of crystallization can be improved by prolonging the annealing time for thicker SmCo film. We also found that the surface roughness and the average grain size of SmCo can be decreased, as well as the intensity ratio （R） of SmCo（002） and Cu（111） reflection peaks be increased by adding Cr layer, consequently, the magnetic properties are enhanced. We concluded that the magnetic properties of SmCo/Cu films can be further optimized as varying the thickness of Cr buffer layers and increasing R values, in which, it is a crucial factor that the textile of Cu（111） and SmCo（002） was formed for SmCo/Cu alloy films. |
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| Keywords: | SmCo film buffer layer textile morphology |
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