脉冲无氰电镀在硅基RF-MEMS滤波器中的应用及优化

针对硅基RF-MEMS带通滤波器制备过程中金层电镀沉积工艺，基于亚硫酸金盐无氰电镀液，并结合脉冲电镀技术，通过对电流密度、占空比、正负脉冲时间比、脉冲频率、温度、搅拌速率等相关工艺参数进行优化组合，实现了所设计的硅基双层自屏蔽式RF-MEMS带通滤波器制备与测试，也为相关RF-MEMS器件制备提供了工艺指导. 

Optimization on Non-Cyanide Pulse Plating Applied to Silicon-Based RF-MEMS Band-Pass Filters

RF-MEMS technique, which combines MEMS fabrication technologies and microwave theories, provides a new solution for the development of key components of millimeter-wave radar and advanced communication systems to be much smaller and higher density integrated. In order to optimize the gold layer deposition technique for the silicon-based RF-MEMS band-pass filter fabrication, a pulse plating technique was proposed based on the environment friendly non-cyanide sulfite gold salts solutions. By optimizing key process parameters including current density, duty ratio, positive and negative pulse time ratio, pulse frequency, temperature and stirring speed, the optimized electroplating parameters were obtained and were successfully applied to the fabrication of silicon-based dual-layer self-shielded RF-MEMS band-pass filters. The study provides a fundamental guidance to the fabrication of RF-MEMS correlation devices.