硅基自屏蔽式MEMS带通滤波器

基于硅基深反应离子刻蚀、表面金属化、热压金-金键合等微机电系统（micro-electro-mechanical-systems，MEMS）加工工艺，并结合耦合系数设计方法，选用终端开路式交指结构，实现了一种应用于C波段的自屏蔽式MEMS带通滤波器.开发了该新型滤波器工艺加工流程，并基于高阻硅衬底成功实现了滤波器的制造和测试.测试结果表明，所制造的滤波器中心频率为3.96 GHz，频率误差为2.6%，通带内插入损耗约4 dB，驻波比小于1.2，相对带宽为20.7%，器件整体尺寸为7.0 mm×7.8 mm×0.8 mm，器件质量小于0.1 g，具有尺寸小、重量轻、性能高、造价低、可批量生产、易于单片集成等显著优点，适应了微波毫米波电路对于滤波器件小型化、轻质化、集成化发展的应用要求. 

A Silicon-Based Self-Shielded MEMS Bandpass Filter

Basing on coupling coefficient technique and micro-electro-mechanical-system (MEMS) fabrication techniques such as silicon deep reactive ion etching (DRIE), surface metallization and thermal pressed Au-Au bonding, process flows of a self-shielded double-layer interdigital bandpass filter was developed, and a prototype bandpass filter of its kind with open circuit type cross finger structure to be applied to C band was successfully fabricated and tested. Measurement results show that, the center frequency is 3.96 GHz; the frequency error is 2.6%; the insertion loss is 4 dB; the voltage standing wave ratio (VSWR) is below 1.2; the relative is 20.7%; size of the filter device is 7.0 mm×7.8 mm×0.8 mm and the weight is less than 0.1 g. The proposed bandpass filter possesses the advantages of small size, light weight, high performance, low cost, easy to be integrated and being able to be batch produced, adapting to the needs for miniaturization, weight reduction and monolithic integration of filters in microwave and millimeter wave circuits and systems.