| SnO_2薄膜的形貌及其电特性分析 |
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| 引用本文： | 刘彭义,陈俊芳.SnO_2薄膜的形貌及其电特性分析[J].汕头大学学报(自然科学版),1997,12(2):80-83. |
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| 作者姓名： | 刘彭义 陈俊芳 |
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| 作者单位： | 暨南大学物理学系，华南师范大学量电所，暨南大学物理学系 |
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| 基金项目： | 国务院侨办重点学科科研基金 |
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| 摘 要： | 我们用ＰＥＣＶＤ方法制备出ＳｎＯ_２薄膜，透射电镜ＴＥＭ分析表明沉积温度由高到低时，ＳｎＯ_２膜从多晶态转变为非晶态，并且其电阻率随之增加；沉积时氧气流量增加时，ＳｎＯ_２的电阻率增加。
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| 关 键 词： | SnO_2薄膜，微观形貌，方块电阻 |
An analysis of the structural and electrical properties of SnO2 thin films |
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| Liu Pengyi.An analysis of the structural and electrical properties of SnO2 thin films[J].Journal of Shantou University(Natural Science Edition),1997,12(2):80-83. |
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| Authors: | Liu Pengyi |
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| Abstract: | We have prepared SnO2 thin films at different temperatures by PECVD. Transmission electron microscopy (TEM) shows that the SnO2 thin films undergo the transition from polycrystalline to amorphous phase when the deposition temperature drops. The sheet resistance of the films lessens with rise in deposition temperature and increases with expansion in volume of oxygen flow. |
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| Keywords: | SnO2 thin film microstructure sheet resistance |
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