Study on the recovery of NBTI of ultra-deep sub-micro MOSFETs |
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Authors: | Cao Yan-Rong Ma Xiao-Hu Hao Yue Zhang Yue Yu Lei Zhu Zhi-Wei and Chen Hai-Feng |
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Affiliation: | School of Microelectronics, Xidian University, Xi'an 710071, China Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, Xi'an 710071, China |
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Abstract: | Taking the actual operating condition of complementary metal oxide
semiconductor (CMOS) circuit into account, conventional direct
current (DC) stress study on negative bias temperature instability
(NBTI) neglects the detrapping of oxide positive charges and the
recovery of interface states under the `low' state of p-channel metal
oxide semiconductor field effect transistors (MOSFETs) inverter
operation. In this paper we have studied the degradation and recovery
of NBTI under alternating stress, and presented a possible recovery
mechanism. The three stages of recovery mechanism under positive bias
are fast recovery, slow recovery and recovery saturation. |
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Keywords: | NBTI recovery interface states oxide positive charges |
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