| Comparison of Electron Acceleration Ability of SiO_2 and ZnS fromZnS∶Er Transient Electroluminescence |
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| 引用本文： | 张福俊,徐征,刘玲,孟立建.Comparison of Electron Acceleration Ability of SiO_2 and ZnS fromZnS∶Er Transient Electroluminescence[J].中国稀土学报(英文版),2006(3). |
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| 作者姓名： | 张福俊 徐征 刘玲 孟立建 |
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| 作者单位： | Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 China，Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 China，Departmento de Fisica Instituto Superior de Engenharia do Porto 4200-072 Porto Protugal，Key Laboratory of Luminescence and Optical Information Ministry of Education Institute of Optoelectronic Technology Beijing Jiaotong University Beijing 100044 China，Departmento de Fisica Instituto Superior de Engenharia do Porto 4200-072 Porto Protugal |
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| 基金项目： | ProjectsupportedbyNSFC(10374001,10434030and60576016),StateKeyProjectofBasicResearch(2003CB314707),theExcellentDoctor′sScienceandTechnologyInnovationFoundationofBeijingJiaotongUniversity(48011)andPandengPlanningofBeijingJiaotongUniversity(296) |
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| 摘 要： | Thefirstcommerciallysuccessfulelectrolumi nescencedisplayofthethinfilmMISIMtype(metal in sulator semiconductor insulator metal)withS=ZnS∶Mn reiescompletelyonaspecialhighfieldelectronictrans portmodecalled“travellingspiketransport”.Optimum excitationefficiencyandavalanchinghavebeenachie vedwiththisballistic(loss freewithrespecttopho nons)accelerationprocess.Itsthresholdfieldstrength isabout106V·cm-1inZnS,andislowenoughforthe resultingelectricbreakdowntobemadereversiblevia chargecontrol,…
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