一种带有注入增强缓冲层的4H-SiC GTO晶闸管

门极可关断(GTO)晶闸管是应用在脉冲功率领域中的一种重要的功率器件。目前,由于常规SiC GTO晶闸管的阴极注入效率较低,限制了器件性能的提高。提出了一种带有注入增强缓冲层的碳化硅门极可关断(IEB-GTO)晶闸管结构,相比于常规GTO晶闸管结构,该结构有着更高的阴极注入效率,从而减小了器件的导通电阻和功耗。仿真结果表明,当导通电流为1 000 A/cm^2时,IEB-GTO晶闸管的比导通电阻比常规GTO晶闸管下降了约45.5%;在脉冲峰值电流为6 000 A、半周期为1 ms的宽脉冲放电过程中,器件的最大导通压降比常规GTO晶闸管降低了约58.5%。

A 4H-SiC GTO Thyristor with Injection Enhanced Buffer Layer

Gate turn-off(GTO) thyristor is an important power device applied in pulse power area. At present, due to the low cathode injection efficiency of conventional SiC gate turn-off(SiC GTO) thyristor, the improvement of device performance is limited. A 4 H-SiC GTO thyristor with injection enhanced buffer layer(IEB-GTO) was proposed. Compared with the conventional GTO(CON-GTO) thyristor structure, the proposed one had higher cathode injection efficiency, thus the on-resistance and power consumption of the device were decreased. The simulation results show that the specific on-resistance of the IEB-GTO thyristor is reduced by 45.5% approximately compared with the CON-GTO thyristor when the conduction current is 1 000 A/cm^2. And the maximum conduction voltage drop is reduced by 58.5% approximately compared with the CON-GTO thyristor in the process of wide-pulse discharge with peak current of 6 000 A and half sinusoidal of 1 ms.