| 钛掺杂介孔二氧化硅薄膜的制备与表征 |
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| 引用本文： | 岳春晓,姚兰芳,鲁风芹.钛掺杂介孔二氧化硅薄膜的制备与表征[J].稀有金属材料与工程,2008,37(Z2):217-220. |
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| 作者姓名： | 岳春晓 姚兰芳 鲁风芹 |
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| 作者单位： | 上海理工大学理学院,上海,200093 |
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| 基金项目： | Supported by Innovation Program of Shanghai Municipal Education Commission. |
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| 摘 要： | 采用溶胶-凝胶工艺,选用表面活性剂十六烷基三甲基溴化铵(CTAB)为模板剂,通过正硅酸乙酯(TEOS)和钛酸丁酯(TPOT)的分步水解得到均匀的SiO2-TiO2复合溶胶,制备了具有介孔结构的钛掺杂的二氧化硅薄膜.薄膜的折射率在1.20～1.236之间可调,介电常数在2.54～2.817之间.随着钛含量的增加,折射率和介电常数增大,而孔洞率降低.结果分析表明钛离子均匀的分散在SiO2-TiO2网络中形成了Si-O-Ti键的孤立四配位形态.
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| 关 键 词： | 溶胶-凝胶法 钛掺杂的二氧化硅薄膜 介孔结构 |
| 文章编号： | 1002-185X(2008)S2-217-04 |
| 修稿时间： | 2007年11月22 |
Preparation and Characterization of Ti-Doped SiO2 Mesoporous Films by Sol-Gel Processing |
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| Yue Chunxiao,Yao Lanfang,Lu Fengqin.Preparation and Characterization of Ti-Doped SiO2 Mesoporous Films by Sol-Gel Processing[J].Rare Metal Materials and Engineering,2008,37(Z2):217-220. |
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| Authors: | Yue Chunxiao Yao Lanfang Lu Fengqin |
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| Abstract: | Ti-doped SiO2 mesoporous films were synthesized by the sol-gel process using suffactant cetyltrimethyl ammonium bromide(CTAB)as the template.Stable and homogeneous composite sols were prepared from the precursor tetraethyl orthosilicate(TEOS)and titanium isopropoxide(TPOT).Within the studied Ti content range,the refractive index can be adjusted from 1.20 to1.236,and dielectric constants from 2.54 to 2.817.With the molar ratio of the added TiO2,refractive index and dielectric constants increase,and porosity decreases.It is found that Si-O-Ti bonding forms via well distribution of Ti4 cations in the SiO2-TiO2 network which have mesoporous structures. |
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| Keywords: | sol-gel processing Ti-doped SiO2 films mesoporous structures |
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