Formation of Nano-Crystalline Phase in Hydrogenated Amorphous Silicon Thin Film by Plasma Focus Ion Beam Irradiation |
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| Authors: | S K Ngoi S L Yap B T Goh R Ritikos S A Rahman C S Wong |
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| Affiliation: | (1) Plasma Research Laboratory, Plasma Technology Research Center, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia;(2) Solid State Research Laboratory, Low Dimensional Materials Research Center, Physics Department, University of Malaya, 50603 Kuala Lumpur, Malaysia; |
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| Abstract: | A 3.3 kJ Mather type dense plasma focus device is used to generate a pulsed argon ion beam of 100 KeV in this work. Hydrogenated
amorphous silicon (a-Si:H) film prepared by plasma enhanced chemical vapor deposition (PECVD) on c-Si substrate was irradiated
with the argon ion beam produced by this dense plasma focus device. The effects of exposure to a single, 5 and 10 shots of
dense plasma focus argon ion beam irradiation on the surface morphology, crystallinity and chemical bonding properties of
the a-Si:H films were studied using Field Emission Scanning Electron Microscope (FESEM), X-ray Diffraction (XRD), Raman scattering
and Fourier Transform Infrared (FTIR) spectroscopy, respectively. Formation of nano-crystalline silicon phase along with increase
in structural order and hydrogen content in the film structure has been observed when the a-Si:H film was irradiated with
a single shot of dense plasma focus argon ion beam. Exposure to 5 and 10 shots of the dense plasma focus argon ion beam irradiation
reduced the hydrogen content resulting in a decrease in crystallinity and structural order in the film structure. |
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