Phase equilibria in InAsSbP quaternary alloys grown by liquid phase epitaxy

The quaternary alloy InAs_1−x−ySb_xP_y, lattice-matched to InAs, is a promising material for the production of infrared light sources for the detection of gases in the 2–4 μm region of the spectrum. In this work, thermodynamic phase equilibrium calculations have been carried out to determine the compositions required for liquid phase epitaxial growth and the extent of the miscibility gap in the solid material. For high band gap materials, the desired growth temperature is found to be intermediate between a low temperature required to grow P-rich solids and higher temperatures required to avoidspinodal decomposition. Conventional LPE growth at an intermediate temperature of 583°C is found to produce good material with high luminescence efficiency and excellent optical characteristics. Problems with phosphorus loss from the melt are also discussed and lower growth temperatures are found to considerably reduce this problem. Growth in the metastable region between the binodal and spinodal lines has been achieved with the production of phosphorus-rich solids with concentrations up to y = 0.445.