| 大剂量中子嬗变掺杂直拉硅中施主及缺陷能级的研究 |
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| 引用本文： | 任丙彦,崔德升,刘安平.大剂量中子嬗变掺杂直拉硅中施主及缺陷能级的研究[J].河北工业大学学报,1988(1). |
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| 作者姓名： | 任丙彦 崔德升 刘安平 |
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| 摘 要： | 用低温Hall、深能级瞬态谱仪和红外吸收谱仪研究了大剂量中子嬗变掺杂直拉硅中的深能级电子陷阱和浅施主能级。对这些深浅能级的形成和退火行为进行了研究。发现由于大剂量中子辐照而产生的浅施主是与氧、碳及氧的微沉淀有关的硅-氧-碳络合物。并对大剂量辐照所导致的各种深能级电子陷阱的结构进行了讨论。
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| 关 键 词： | 中子嬗变掺杂 施主 电子陷阱 深能级 |
The Study on Donors and Levels of Defects inHigh Dose Neutron Transmutation Doping CZ Silicon |
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| Ren Bingyan Cui Desheng Liu Anping.The Study on Donors and Levels of Defects inHigh Dose Neutron Transmutation Doping CZ Silicon[J].Journal of Hebei University of Technology,1988(1). |
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| Authors: | Ren Bingyan Cui Desheng Liu Anping |
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| Affiliation: | Ren Bingyan Cui Desheng Liu Anping |
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| Abstract: | Deep level electron traps and shallow donor levels in high dose NTDCZSi are studied by low temperature Hall effect, deep level transient spectroscopy and infrared absorption spectroscopy. The formation and annealing behavior of the deep-shallow levels are discussed. It is found that the shallow donor levels produced by high dose neutron irradiation are caused by Si-O-C complex compound associated with oxygen carbon and micro-precipitation of oxygen. Aslo, the structure of various deep level electron traps produced by high dose neutron irradiation are discussed. |
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| Keywords: | (Neutron transmutation doping)(Donor)(E1ectron traps)(Deep level) |
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