| BaTiO3铁电薄膜在硅基片上的取向生长 |
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| 引用本文： | 魏贤华,黄文,接文静,朱俊.BaTiO3铁电薄膜在硅基片上的取向生长[J].硅酸盐学报,2007,35(5):583-587. |
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| 作者姓名： | 魏贤华 黄文 接文静 朱俊 |
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| 作者单位： | 1. 西南科技大学材料科学与工程学院,四川,绵阳,621010;电子科技大学,电子薄膜与集成器件国家重点实验室,成都,610054
2. 电子科技大学,电子薄膜与集成器件国家重点实验室,成都,610054 |
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| 基金项目： | 国家重点基础研究发展计划(973计划) |
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| 摘 要： | 采用脉冲激光沉积方法,在硅基片上先沉积MgO或CeO2缓冲层后再制备BaTiO3(BTO)铁电薄膜.通过原位反射高能电子衍射来监测MgO,CeO2缓冲层在硅基片上的生长行为.用X射线衍射测定BTO薄膜的结晶取向.并利用压电响应力显微镜观察了铁电薄膜的自发极化形成的铁电畴.结果表明:BTO薄膜在不同的缓冲层硅基片上以不同的取向生长,在织构的MgO/Si(001)基片上为(001)择优,择优程度与MgO织构品质有关,其中在双轴织构MgO缓冲层上为(001)单一取向;在CeO2(111)缓冲层上为(011)单一取向.(001)取向的BTO薄膜具有更大的面外极化,而(011)取向的BTO薄膜具有更大的面内极化.
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| 关 键 词： | 钛酸钡 铁电薄膜 缓冲层 取向生长 激光沉积 |
| 文章编号： | 0454-5648(2007)05-0583-05 |
| 修稿时间： | 11 14 2006 12:00AM |
ORIENTATION GROWTH OF BaTiO3 FERROELECTRIC FILMS ON THE SUBSTRATES OF SILICON |
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| WEI Xianhua,HUANG Wen,JIE Wenjing,ZHU Jun.ORIENTATION GROWTH OF BaTiO3 FERROELECTRIC FILMS ON THE SUBSTRATES OF SILICON[J].Journal of The Chinese Ceramic Society,2007,35(5):583-587. |
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| Authors: | WEI Xianhua HUANG Wen JIE Wenjing ZHU Jun |
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| Affiliation: | 1. School of Materials Science and Engineering, Southwest University of Science and Technology, Mianyang 621010, Sichuan; 2. State Key Laboratory of Electronic Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054, China |
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| Abstract: | Buffer layers of MgO(or CeO2)were first deposited on silicon substrates,and then BaTiO3(BTO)ferroelectric films were formed again by pulsed laser deposition.The growth of MgO,CeO2 buffer layers was monitored in-situ by the reflection high-energy electron diffraction,and the crystalline orientation of BTO films was investigated by X-ray diffraction.Furthermore,ferroelectric domains formed in BTO films by spontaneous polarization were observed by piezoresponse force microscopy.The results show that BTO films are grown with different crystal orientation on different buffer layers of silicon substrates.The BTO films grew preferen-tially along the(001)orientation on textured MgO/Si(001);the preferred degree is correlated to the texture characteristics.BTO films with texture characteristics on the(001)and(011)orientations were obtained on biaxial textured MgO and CeO2(111)buffer layers,respectively.BTO films with an(001)orientation exhibit a higher out-of-plane polarization,while the films grown along an(011)orientation show higher in-plane polarization. |
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| Keywords: | barium titanate ferroelectric films buffer layer oriented growth laser deposition |
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