| 异质外延GaN薄膜中缺陷对表面形貌的影响 |
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| 引用本文： | 高志远,郝跃,张金凤.异质外延GaN薄膜中缺陷对表面形貌的影响[J].材料导报,2009,23(4). |
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| 作者姓名： | 高志远 郝跃 张金凤 |
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| 作者单位： | 西安电子科技大学微电子学院宽禁带半导体材料与器件教育部重点实验室,西安,710071 |
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| 基金项目： | 国家重点基础研究发展规划(973计划)，西安应用材料创新基金 |
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| 摘 要： | 通过对异质外延GaN薄膜中各类结构缺陷进行系统的研究,发现材料内部的各种体、面和线缺陷,包括沉淀物、裂纹、反向边界、局部立方相、小角晶界和位错,都会对表面形貌产生影响,并具有对应的特征形貌.GaN薄膜中缺陷与表面形貌的这种对应关系,可以通过MOCVD生长机理和缺陷间相互作用机制加以解释,同时也提供了一种简单而有效的研究与检测GaN材料内部缺陷的方法.
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| 关 键 词： | 缺陷结构 表面形貌 生长机理 |
Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology |
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| GAO Zhiyuan,HAO Yue,ZHANG Jinfeng.Effect of Structural Defects in GaN Epitaxial Layer on Its Surface Morphology[J].Materials Review,2009,23(4). |
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| Authors: | GAO Zhiyuan HAO Yue ZHANG Jinfeng |
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| Affiliation: | Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices;School of Microelectronics;Xidian University;Xi'an 710071 |
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| Abstract: | A systematical observation of several structural defects in GaN layer grown by MOCVD is reported,including precipitate,crack,inversion domain,local cubic phase,low angle grain boundary and dislocations.It is found that each type of these defects will affect the surface morphology of the epilayer,and hence has its own corresponding morphology characteristic.This correlation between defects and surface morphology can be interpreted by the growth mechanisms and defect interactions,and also provide an easy and ... |
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| Keywords: | GaN |
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