金属诱导晶化基础与应用研究进展

将非晶半导体与金属相接触,可以诱导非晶半导体在极低的温度下结晶,这一现象被称为金属诱导晶化。薄膜状态的晶体半导体是用于众多先进技术中的关键材料,被广泛应用于微电子、光电子、显示技术和光伏技术等领域。金属诱导晶化为低温晶体半导体器件的制造、纳米多孔金属材料的合成以及金属材料界面工程提供了一种崭新的途径,引起了学术界和工业界的广泛关注。本文综述了金属诱导晶化的研究进展,对不同金属/非晶半导体体系中存在的金属诱导晶化现象进行了归纳分类总结,对其热力学原理和动力学机制进行了详细的计算与分析,突出了界面热力学在薄膜体系的固→固相变中的作用,最终阐明了金属诱导晶化过程的内在机理,并对金属诱导晶化过程未来的研究趋势进行了展望。

Research Progress on Fundamentals and Applications of Metal-Induced Crystallization

By contacting amorphous semiconductors with metals, amorphous semiconductors can be induced to transform into crystalline semiconductors at extremely low temperatures, a phenomenon known as metal-induced crystallization(MIC). Thin-film crystalline semiconductor is one of the key materials in many advanced technologies, and is widely used in the fields of microelectronics, optoelectronics,display technology and photovoltaic technology. MIC provides a new route for the production of crystalline semiconductor thin-films devices at low temperature, for fabrication of nanoporous metal materials and for interface engineering of metallic materials, and has therefore attracted wide interests from both academic and industrial communities. This paper reviews the current research progress of metal-induced crystallization of amorphous semiconductors at low temperatures, and the MIC behaviors in different metal/amorphous semiconductor systems are also classified and summarized. The thermodynamics and kinetics of MIC were calculated and analyzed in detail, highlighting the role of interface thermodynamics inthe solid-solid phase transformation of thin-film systems. On this basis, the underlying mechanism of MIC has been elucidated. Finally, the future research trends of MIC are prospected.