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Effect of doping concentration on the properties of bismuth doped tin sulfide thin films prepared by spray pyrolysis
Affiliation:1. Department of Physics, Annamalai University, Annamalainagar 608002 India;2. Department of Physics, School of Science and Humanities, Karunya University, Coimbatore 641114, India;1. Dr. S.S. Bhatnagar University Institute of Chemical Engineering & Technology, Panjab University, Chandigarh 160014, India;2. Department of Chemistry, Panjab University, Chandigarh 160014, India;3. Department of Chemistry, College of Science and Arts and Promising Centre for Sensors and Electronic Devices (PCSED), Najran University, P.O. Box-1988, Najran 11001, Saudi Arabia;1. Laboratoire de Photovoltaïque, Centre de Recherches et des Technologies de L’Energie, Technopole de Borj-Cédria, BP 95, 2050, Hammam-Lif, Tunisia;2. Institut National de La Recherche Scientifique, INRS-Énergie, Matériaux et Télécommunications, 1650, Blvd. Lionel-Boulet, Varennes, QC, J3X-1S2, Canada;3. Center of Advanced Materials Research, Research Institute of Sciences and Engineering University of Sharjah, PO Box 27272, Sharjah, United Arab Emirates;4. Research Chair for Tribology, Surface and Interface Sciences, Department of Physics and Astronomy, College of Science, King Saud University, Riyadh, Saudi Arabia;5. King Abdullah Institute for Nanotechnology (KAIN), King Saud University, Riyadh, Saudi Arabia;6. School of Design Engineering, Universitat Politécnica de Valencia, Camí de Vera, Spain
Abstract:Bismuth doped tin sulfide (SnS:Bi) thin films were deposited onto glass substrates by the spray pyrolysis technique at the substrate temperature of 350 °C. The effect of doping concentration Bi/Sn] on their structural, optical and electrical properties was investigated as a function of bismuth doping between 0 and 8 at%. The XRD results showed that the films were polycrystalline SnS with orthorhombic structure and the crystallites in the films were oriented along (111) direction. Atomic force microscopy revealed that the particle size and surface roughness of the films increased due to Bi-doping. Optical analysis exhibited the band gap value of 1.40 eV for SnS:Bi (6 at%) which was lower than the band gap value for 0 at% of Bi (1.60 eV). The film has low resistivity of 4.788×10?1 Ω-cm and higher carrier concentration of 3.625×1018 cm?3 was obtained at a doping ratio of 6 at%.
Keywords:Bismuth doping  Tin sulfide  Spray pyrolysis  Hall effect
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