| 基于P—N结的硅太阳能电池的数值分析 |
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| 引用本文： | 张彩珍,刘肃,陈永刚.基于P—N结的硅太阳能电池的数值分析[J].兰州铁道学院学报,2009,28(4):144-146,150. |
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| 作者姓名： | 张彩珍 刘肃 陈永刚 |
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| 作者单位： | 张彩珍(兰州交通大学电子与信息丁程学院,甘肃兰州,730070;兰州大学物理科学与技术学院,甘肃兰州,730000);刘肃(兰州大学物理科学与技术学院,甘肃兰州,730000);陈永刚(兰州交通大学自动化与电气工程学院,甘肃兰州,730070) |
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| 摘 要： | 在P—N结硅太阳能电池数学模型的基础上，利用Matlab语言对硅太阳能电池的光电流密度进行了数值模拟，得到了P-N结硅太阳能电池的绝对光谱响应曲线，并采用参数分类变化和比较的方法，对硅片的器件参数和光电流密度之间的关系进行了数值分析，得出了太阳能电池光电流密度与硅片参数之间的相互关系，找出了可以提高光电流密度的方法，实验结论在具体的工艺实践中具有指导意义．
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| 关 键 词： | P—N结 太阳能电池 绝对光谱响应 光电流密度 |
Simulation of Silicon Solar Cells Based on P-N Junction |
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| Affiliation: | ZHANG Cai-zhen , LIU Su, CHEN Yong-gang(1. School of Electronic and Information Engineering, Lanzhou Jiaotong University, Lanzhou 730070,China; 2. School of Physical Science and Technology, Lanzhou University,Lanzhou 730000,China; School of Automation and Electrical Engineering, Lanzhou Jiaotong University, Lanzhou 730070 ,China) |
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| Abstract: | On the basis of mathematical model of silicon solar cells with P-N junction, the photocurrent density of silicon solar cells was numerically simulated by means of MATLAB, the absolute spectrum response curves of silicon solar cells were obtained, and the method of classified variation and comparison of parameters was used to analyze the relation between device parameters and photocurrent density. The interrelation between device parameters and photocurrent density was obtained and the way of improving the photocurrent density was found. The experimental results have the directive function in concrete technology. |
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| Keywords: | P-N junction solar cell absolute spectrum response photocurrent density |
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