Dielectric properties of sol-gel derived Ta2O5 thin films |
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Authors: | S Yildirim D Deger I Turhan |
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Affiliation: | a Physics Department, Faculty of Science, Istanbul University, 34459 Vezneciler-Istanbul, Turkey b Department of Physics, Faculty of Science and Letter, Istanbul Technical University, 34469 Maslak-Istanbul, Turkey |
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Abstract: | The dielectric constant and the dielectric loss of tantalum pentoxide (Ta2O5) thin films, produced by sol-gel spin-coated process on Corning glass substrates, have been investigated in the frequency range of 20-105 Hz and the temperature range of 183-403 K, using ohmic Al electrodes. The frequency and temperature dependence of relaxation time has also been determined. The capacitance and loss factor were found to decrease with increasing frequency and increase with increasing temperature. The activation energy values were evaluated and a good agreement between the activation energy values obtained from capacitance and dielectric loss factor measurements were observed. |
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Keywords: | Ta2O5 Thin films Sol-gel Dielectric constant Dielectric loss and relaxation |
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