Top contact organic field effect transistors fabricated using a photolithographic process |
| |
Authors: | Wang Hong Ji Zhuo-Yu Shang Li-Wei Liu Xing-Hu Peng Ying-Quan and Liu Ming |
| |
Affiliation: | Institute of Microelectronics, School of Physical Science and Technology, Lanzhou University, Lanzhou 730000, China; Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China |
| |
Abstract: | This paper proposes an effective method of fabricating top contact organic field effect transistors by using a photolithographic process. The semiconductor layer is protected by a passivation layer. Through photolithographic and etching processes, parts of the passivation layer are etched off to form source/drain electrode patterns. Combined with conventional evaporation and lift-off techniques, organic field effect transistors with a top contact are fabricated successfully, whose properties are comparable to those prepared with the shadow mask method and one order of magnitude higher than the bottom contact devices fabricated by using a photolithographic process. |
| |
Keywords: | organic field effect transistors top contact photolithographic |
本文献已被 维普 等数据库收录! |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
|
点击此处可从《中国物理 B》下载免费的PDF全文 |
|