| 纳米MOS器件的设计模型 |
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| 引用本文： | 王伟.纳米MOS器件的设计模型[J].电气电子教学学报,2006,28(5):57-60. |
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| 作者姓名： | 王伟 |
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| 作者单位： | 南京邮电大学,光电工程学院,江苏,南京,210003 |
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| 基金项目： | 江苏省教育厅高校人文社会科学基金;南京邮电大学校科研和教改项目 |
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| 摘 要： | 几十年来，MOS器件一直遵循摩尔定律不断发展，对于缩小到纳米尺度的MOS器件，量子效应更加突出。研究纳米尺度MOS器件的物理问题，以及适用于纳米MOS器件的设计已成为当前微电子领域重要研究内容。本文简要介绍和评述了纳米MOS器件的设计模型．并对基于非平衡态格林函数以及薛定谔方程和泊松方程自洽解的器件模型应用进行了举例说明。
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| 关 键 词： | 纳米MOS 量子模型 格林函数 |
| 文章编号： | 1008-0686（2006）05-0057-04 |
| 收稿时间： | 2006-08-18 |
| 修稿时间： | 2006-09-08 |
Quantum Modeling of Nanoscale MOS Devices |
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| WANG Wei.Quantum Modeling of Nanoscale MOS Devices[J].Journal of Electrical & Electronic Engineering Education,2006,28(5):57-60. |
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| Authors: | WANG Wei |
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| Affiliation: | College of Opto-electronic Engineering, Nanjing University of Posts and Telecommunications, Nanjing 210003, China |
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| Abstract: | The MOS transistors have been developing according to Moore's Law over the past decades.However,quantum effects become pronounced when the devices shrink to nanoscale dimensions.The physics and design of nanoscale MOS devices presents a serious challenge for device physicists and design engineers in microelectronics field.This article provides a brief review of physical models of nanoscale MOS devices and gives device modeling examples based on self-consistent solutions to Poisson's equation,non-equilibrium Green's functions and the Schr?dinger equation. |
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| Keywords: | nanoscale MOS quantum Modeling green's function |
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