Microstructural, crystal structure and electrical characteristics of shock-consolidated Ga2O3 doped ZnO bulk |
| |
| Authors: | Youngkook Kim Ikegami Tomoaki |
| |
| Affiliation: | a Shock Wave and Condensed Matter Research Center, Kumamoto University Kurokami 2-39-1, Kumamoto City, 860-8555, Japanb Graduate School of Science & Technology, Kumamoto University Kurokami 2-39-1, Kumamoto City, 860-8555, Japan |
| |
| Abstract: | Ga2O3 (5 wt.%) doped zinc oxide (ZnO, 95 wt.%) bulk was fabricated by underwater shock compaction technique. The microstructural, crystal structure and electrical properties of shock-consolidated samples were investigated and compared to a commercially available sintered Ga2O3 (5 wt.%) doped ZnO (95 wt.%). The relative density of shock-consolidated sample was about 97% of the theoretical density, and no grain growth and lattice defects were confirmed. The grain boundary resistance was remarkably higher than that of commercial sintered Ga2O3 doped ZnO and nonlinear current-voltage (I-V) characteristics of shock-consolidated ZnO and Ga2O3 doped ZnO were very lower than that of commercial ZnO varistor. |
| |
| Keywords: | Underwater shock compaction Grain boundary resistance Ga2O3 doped ZnO Nonlinear current-voltage (I-V) characteristic |
| 本文献已被 ScienceDirect 等数据库收录！ |
|
