The growth and characterization of GaN on sapphire and silicon |
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Authors: | Z J Yu B S Sywe A U Ahmed J H Edgar |
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Affiliation: | (1) Department of Chemical Engineering, Durland Hall, Kansas State University, 66506-5102 Manhattan, KS |
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Abstract: | MOCVD (metalorganic chemical vapor deposition) of GaN on both silicon and sapphire substrates was studied over the temperature
range of 370 to 1050° C. The crystallinity and surface morphology of the films varied with the deposition temperatures. By
first depositing an AlN buffer layer, the crystallinity of GaN was improved for low temperature depositions, but little improvement
in the surface morphology was observed. On sapphire (0001) substrates, epitaxial layers were produced at a deposition temperature
as low as 500° C. With silicon substrates, polycrystalline films were produced which were randomly oriented on the (111) plane
and highly oriented on the (100) plane. The surfaces of the films were smooth and specular at low deposition temperatures,
but degraded at higher temperatures. The energy band gaps of these films are in the vicinity of 3.4 eV, close to where they
are expected. Elemental analysis by Auger electron spectroscopy (AES) showed the films to be stoichiometric with low residual
impurity concentrations. |
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Keywords: | MOCVD GaN x-ray diffraction AES |
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