| sol-gel法制备GaN纳米棒的研究 |
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| 引用本文： | 吴玉新,薛成山,庄惠照,田德恒,刘亦安,张晓凯,艾玉杰,孙莉莉,王福学.sol-gel法制备GaN纳米棒的研究[J].电子元件与材料,2005,24(11):13-15. |
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| 作者姓名： | 吴玉新 薛成山 庄惠照 田德恒 刘亦安 张晓凯 艾玉杰 孙莉莉 王福学 |
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| 作者单位： | 山东师范大学物理与电子科学学院半导体研究所,山东,济南,250014 |
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| 摘 要： | 采用简单、有效的sol-gel法在1 000℃时通过氧化镓凝胶和氨气反应成功合成了GaN纳米棒。XRD和SAED的测试结果表明,GaN纳米棒为六方纤锌矿结构。用TEM观察发现,大部分GaN纳米棒平直而光滑,直径为200 nm~1.8μm,最长的纳米棒达几十微米。室温下光致发光谱的测试发现了较强的355.6 nm处的紫外发光峰和445.9 nm处的蓝色发光峰。
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| 关 键 词： | 半导体技术 GaN纳米棒 sol-gel法 光致发光 |
| 文章编号： | 1001-2028（2005）11-0013-05 |
| 收稿时间： | 2005-06-08 |
| 修稿时间： | 2005-06-08 |
Study on GaN Nanorods Prepared by Sol-gel Method |
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| WU Yu-xin,XUE Cheng-shan,ZHUANG Hui-zhao,TIAN De-heng,LIU Yi-an,ZHANG Xiao-kai,AI Yu-jie,SUN Li-li,WANG Fu-xue.Study on GaN Nanorods Prepared by Sol-gel Method[J].Electronic Components & Materials,2005,24(11):13-15. |
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| Authors: | WU Yu-xin XUE Cheng-shan ZHUANG Hui-zhao TIAN De-heng LIU Yi-an ZHANG Xiao-kai AI Yu-jie SUN Li-li WANG Fu-xue |
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| Affiliation: | The Institute of Semiconductor, College of Physics and Electronics, Shandong Normal University, Jinan 250014, China |
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| Abstract: | GaN nanorods were successfully synthesized through the reaction of Ga2O3 gel with NH3 at 1 000℃ by a simple and efficient sol-gel process.The nanorods were confirmed as crystalline wurtzite GaN by XRD and SAED.TEM displays that most of the GaN nanorods are straight and smooth,with diameters ranging from 200 nm to 1.8 μm and lengths typically up to tens of microns.Photoluminescence spectra at room temperature showed a strong ultraviolet luminescence peak located at 355.6 nm and a blue luminescence peak located at 445.9 nm |
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| Keywords: | semiconductor technology GaN nanorods sol-gel photoluminescence |
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