Effect of fullerene doping on the electrical properties of P3HT/PCBM layers |
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| Affiliation: | 1. Department of Physics, Dayananda Sagar College of Engineering, Kumaraswamy Layout, Bangalore 560078, Karnataka, India;2. Shri Dharmasthala Manjunatheshwara Institute of Technology, Ujire, India;1. Physics Department, Faculty of Science, Tanta university, 31527 Tanta, Egypt;2. ME Lab, Physics Department, Faculty of Science, Al-azhar University Cairo, Egypt;1. Laboratoire LPR, Département de Physique, Faculté des Sciences, Université Badji Mokhtar, Annaba, Algeria;2. Université Libanaise, Faculté des sciences (I), Laboratoire de Physique et d?Electronique (LPE), Elhadath, Beirut, Lebanon;3. Condensed Matter Section, the Abdus Salam International Centre for Theoretical Physics (ICTP), Strada Costiera 11, 34014 Trieste, Italy;1. Department of Physics, Lahore College for Women University, Lahore, Pakistan;2. University of South Florida Tampa Florida 33620, USA;3. Central Research Lab,, Lahore college for women university, Lahore, Pakistan |
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| Abstract: | Poly (3-hexylthiophene-2, 5-diyl) (P3HT) and its blend with Phenyl-C61-Butyric acid-Methyl-Ester (PCBM) and fullerene (C60) thin films were prepared and their electrical properties for memory applications were studied. Due to doping, a sharp decrease in the resistance for a P3HT:PCBM:C60 device was observed at around 70 °C which makes it useful for thermal switching applications. Addition of C60 to P3HT:PCBM blend gave a high value for RRESET/RSET in thermal switching. For bias switching, threshold voltage reduces to 1.4 V from 25 V with the addition of C60 to P3HT layer. |
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| Keywords: | Organic semiconductors P3HT:PCBM Thin films Bi-stability Organic memory |
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