Perspective:optically-pumped Ⅲ–Ⅴ quantum dot microcavity lasers via CMOS compatible patterned Si (001) substrates

Direct epitaxial growthⅢ–Ⅴquantum dot(QD)structures on CMOS-compatible silicon substrates is considered as one of the most promising approaches to achieve low-cost and high-yield Si-based lasers for silicon photonic integration.However,epitaxial growth ofⅢ–Ⅴmaterials on Si encounters the following three major challenges:high density of threading dislocations,antiphase boundaries and thermal cracks,which significantly degrade the crystal quality and potential device performance.In this review,we will focus on some recent results related to InAs/GaAs quantum dot lasers on Si(001)substrates byⅢ–Ⅴ/Ⅳhybrid epitaxial growth via(111)-faceted Si hollow structures.Moreover,by using the step-graded epitaxial growth process the emission wavelength of InAs QDs can be extended from O-band to C/L-band.High-performance InAs/GaAs QD microdisk lasers with sub-milliwatts threshold on Si(001)substrates are fabricated and characterized.The above results pave a promising path towards the on-chip lasers for optical interconnect applications.