MPS二极管的少子特性仿真

混合pin/肖特基(MPS)二极管是广泛应用于电子电路中的快恢复功率器件,具有高击穿电压、快速开关和正向电流大等特性。对MPS二极管漂移区的少数载流子的特性进行了仿真分析。仿真结果表明,MPS二极管的p^+区向漂移区注入的少数载流子浓度随外加正向电压和pn结面积占元胞总面积比例的增大而增大。虽然漂移区的少数载流子改变了MPS二极管的工作模式,增大了电流,但是存储在漂移区的少数载流子增大了反向峰值电流和恢复时间,进而增大了功耗并降低了关断速度。折中考虑正向电流和反向恢复特性,可获得具有正向电流大、反向峰值电流小和反向恢复时间短的MPS二极管。

Minority Carrier Characteristics Simulation of MPS Diodes

Merged pin/Schottky(MPS) diode with high breakdown voltage,fast switching speed and large forward current density is fast and soft restoration of power device widely used in electronic circuits. The characteristics of minority carriers in the drift region of the MPS diode were simulated and analyzed. The simulation results show that the minority carriers are injected into the drift region from the p^+ region of the MPS diode, and the concentration minority carriers is increased with the increase of the external forward voltage and the ratio of the pn junction area to the total area of the cell. The operating mode of the MPS diode is changed by the minority carriers in the drift region, and the current is increased. The reverse peak current and recovery time are increased because of the minority carriers stored in the drift region. Therefore, the power consumption is increased and the turn-off speed is reduced. Considering about the characteristics of the forward current and reverse recovery,the MPS diode with large forward current,small reverse peak current and short reverse recovery time can be obtained.