| 新颖红外发光二极管 |
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| 引用本文： | 贾万琼.新颖红外发光二极管[J].半导体光电,1994,15(4):309-314. |
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| 作者姓名： | 贾万琼 |
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| 作者单位： | 重庆光电技术研究所 |
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| 摘 要： | 主要介绍近几年国外研制的红外正面、侧面发光二极管和超辐射发光二极管的最新进展，并对新开发的超晶格、量子阱发光二极管的基本结构、性能、制造技术和应用前景作了简要叙述。
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| 关 键 词： | 红外发光二极管 超晶格 量子阱 |
Novel Infrared Emitting Diode |
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| Jia Wanqong.Novel Infrared Emitting Diode[J].Semiconductor Optoelectronics,1994,15(4):309-314. |
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| Authors: | Jia Wanqong |
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| Abstract: | This paper describes recent development in the research on infrared surface emitting diode, edge-emitting diode and superluminescent emitting diode made in some developed countries. The basic structure, characteristics, manufacture technology and prospect for applications of novel superlattice, quantum well emitting diode are also introduced. |
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| Keywords: | Infrared Emitting Diode Superlattice Quantum Well |
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