Structure of polycrystalline silicon films deposited at low temperature by plasma CVD on substrates exposed to different plasma |
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| Affiliation: | 1. State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Qianjin Street 2699, Changchun 130012, People''s Republic of China;2. State Key Laboratory on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Science, PO Box 912, Beijing 100083, People''s Republic of China;1. Jiangsu Key Laboratory for Optoelectronic Detection of Atmosphere and Ocean, Nanjing University of Information Science &Technology, Nanjing, China;2. Centre for Free-Electron Laser Science, Building 99, Notkestrasse 85, Hamburg, Germany;1. Physics Division, Institute of Nuclear Energy Research (INER), Longtan, 32546, Taoyuan County, Taiwan;2. Department of Engineering and System Science, National Tsing Hua University, 101, Section 2, Kuang-Fu Road, Hsinchu, 30013, Taiwan;1. School of Liberal Arts, Korea University of Technology and Education, Cheonan 31253, Republic of Korea;2. Department of Applied Physics, Institute of Natural Sciences, and Integrated Education Program for Frontier Materials (BK21 Four), Kyung Hee University, Yongin 17104, Republic of Korea;1. State Key Laboratory of Surface Physics, Key Laboratory of Micro and Nano Photonic Structures (Ministry of Education) and Collaborative Innovation Center of Advanced Microstructures, Fudan University, Shanghai, 200433, China;2. Department of Materials Science, Fudan University, Shanghai, 200433, China |
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| Abstract: | Polycrystalline silicon (poly-Si) films were deposited on glass substrates (corning 7059) at 300°C by a plasma enhanced chemical vapor deposition (PECVD) from a SiH4/SiF4 mixture. All poly-Si films were prepared under the same deposition conditions on the substrates subjected to nitrogen, hydrogen and/or CF4 plasma with different gas pressures, just before deposition of the poly-Si films. Effects of such pretreatments for substrates on the structural properties of the resultant poly-Si films have been investigated. The Si film deposited on the substrates without any pretreatments was amorphous. However, formation of a strong 〈110〉 preferentially oriented poly-Si with improved crystallinity was obtained for the films deposited on the glass substrate after plasma pretreatments, which exhibit smoother surfaces. This result was interpreted in terms of a removal of weak Si–Si bonds during nucleation and the subsequent grain growth. |
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