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硅吸除技术
引用本文:蒋荣华,梁李成.硅吸除技术[J].半导体光电,1990,11(3):289-296.
作者姓名:蒋荣华  梁李成
作者单位:峨眉半导体材料厂、所,峨眉半导体材料厂、所,峨眉半导体材料厂、所 四川峨眉 614200,四川峨眉 614200,四川峨眉 614200
摘    要:本文详细地叙了各种硅吸除技术;阐明了非本征吸除、本征吸除和综合吸除的机理和工艺。举例说明了吸除技术的应用。

关 键 词:  吸除技术  单晶材料  工艺

Silicon Gettering Technique
Jiang Ronghua Liang Licheng Xiao Shunzhen Emei Semiconductor Material Factory and Research Institute Emei,Sichuan.Silicon Gettering Technique[J].Semiconductor Optoelectronics,1990,11(3):289-296.
Authors:Jiang Ronghua Liang Licheng Xiao Shunzhen Emei Semiconductor Material Factory and Research Institute Emei  Sichuan
Affiliation:Jiang Ronghua Liang Licheng Xiao Shunzhen Emei Semiconductor Material Factory and Research Institute Emei,Sichuan 614200
Abstract:Various kinds of silcon gettering techiques as well as the mechanism and technology are described in detail such as extrinsic,intrinsic and synthetic getter- ings.Examples are given.demonstrating the applications of the above gettering tech- niques.
Keywords:Silicon Gettering Technique
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