| 高速大功率半导体开关RSD的di/dt耐量极限值 |
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| 引用本文： | 刘宝生,余岳辉,梁琳,周郁明.高速大功率半导体开关RSD的di/dt耐量极限值[J].通信电源技术,2006,23(5):1-2,8. |
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| 作者姓名： | 刘宝生 余岳辉 梁琳 周郁明 |
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| 作者单位： | 华中科技大学电子科学与技术系,湖北,武汉,430074 |
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| 基金项目： | 国家自然科学基金资助项目(50277016) |
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| 摘 要： | 文章由等离子体双极漂移方程和临界预充电荷条件出发,得出高速大功率半导体开关RSD的di/dt耐量表达式。从外电路和器件结构本身两方面分析了RSD的di/dt耐量的影响因素,并提出了改善di/dt耐量的措施,测试结果证明了理论分析的正确性。
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| 关 键 词： | 脉冲功率技术 RSD 半导体开关 di/dt特性 |
| 文章编号： | 1009-3664（2006）05-0001-02 |
| 收稿时间： | 2006-05-26 |
| 修稿时间： | 2006-05-26 |
The di/dt Limit Values of Hi-Speed and Hi-Power Semiconductor Switch RSD |
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| LIU Bao-sheng,YU Yue-hui,LIANG Lin,ZHOU Yu-ming.The di/dt Limit Values of Hi-Speed and Hi-Power Semiconductor Switch RSD[J].Telecom Power Technologies,2006,23(5):1-2,8. |
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| Authors: | LIU Bao-sheng YU Yue-hui LIANG Lin ZHOU Yu-ming |
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| Abstract: | We get the expression of di/dt bearing of pulsed power semiconductor switch RSD which is based on equation of plasma bipolar drift and the critical condition of stored charge.We analyzed the influence factors of di/dt bearing of RSD from two aspects of outer circuit and devices' own structure.Some measures which can improve di/dt bearing have been proposed.The testing results proved the theoretical analysis. |
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| Keywords: | pulsed power technology RSD semiconductor switch di/dt characteristics |
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