| Integration of GaN thin films with silicon substrates by fusion bonding and laser lift-off |
| |
| 作者姓名： | 王婷 郭霞 方圆 刘斌 沈光地 |
| |
| 作者单位： | Optoelectronic Technology Laboratory Institute of Electronic Information & Control Engineering Beijing University of Technology，Optoelectronic Technology Laboratory Institute of Electronic Information & Control Engineering，Beijing University of Technology，Optoelectronic Technology Laboratory Institute of Electronic Information & Control Engineering，Beijing University of Technology，Optoelectronic Technology Laboratory Institute of Electronic Information & Control Engineering，Beijing University of Technology，Optoelectronic Technology Laboratory Institute of Electronic Information & Control Engineering，Beijing University of Technology，Beijing 100022，Beijing 100022，Beijing 100022，Beijing 100022，Beijing 100022 |
| |
| 基金项目： | This work was partly supported by the National High Technology Research and Development Program of China (No. 2004AA311030)
the State Key Program of Basic Research of China (No. 20000683-02)
the Beijing Municipal Education Commission (No. 2002kj018, and kz200510005003)
and the Beijing Municipal Science and Technology commission (No. D0404003040221). |
| |
| 摘 要： | GaN thin films grown on sapphire substrates by metalorganic chemical vapor deposition (MOCVD) are successfully bonded and transferred onto Si receptor substrates using fusion bonding and laser lift-off (LLO) technique. GaN/Al_2O_3 structures are joined to Si substrates by pressure bonding Ti/Au coated GaN surface onto Ti/Au coated Si receptor substrates at the temperature of 400℃. KrF excimer laser with 400-mJ/cm~2 energy density, 248-nm wavelength, and 30-ns pulse width is used to irradiate the wafer through the transparent sapphire substrates and separate GaN films from sapphire. Cross-section scanning electron microscopy (SEM) combined with energy dispersive X-ray spectrometer (EDS) measurements show that Au/Si solid solution is formed during bonding process. Atomic force microscopy (AFM) and photoluminescence (PL) measurements show that the qualities of GaN films on Si substrates degrade little after substrates transfer.
|
| 本文献已被 CNKI 等数据库收录！ |
