| GaAs／AlGaAs非对称耦合双阱光荧光的温度依赖关系 |
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| 引用本文： | 徐士杰,刘剑.GaAs／AlGaAs非对称耦合双阱光荧光的温度依赖关系[J].红外与毫米波学报,1994,13(1):77-80. |
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| 作者姓名： | 徐士杰 刘剑 |
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| 作者单位： | 中国科学院半导体研究所半导体超晶格国家实验室 |
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| 摘 要： | 报道了ＧａＡｓ／ＡｌＧａＡｓ非对称耦合双量子阱ｐｉｎ结构在不同温度下的光荧光谱，观察到宽阱与窄阱重空穴激子峰荧光强度随温度上升而较快下降的不同变化关系，结果表明窄阱电子的热发射是导致窄阱光荧光强度随温度上升而较快下降的主要原因。同时观测到宽阱轻空穴激子峰强度特环的温度依赖关系，并分析了其物理机制。
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| 关 键 词： | 光荧光 量子阱 温度相关 砷化镓 |
TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN GaAS/AlGaAS ASYMMETRIC COUPLED DOUBLE QUANTUM WELLS STRUVTURE |
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| Xu Shijie,Liu Jian,Li Guohu,Zheng Houzhi,Jiang Desheng.TEMPERATURE DEPENDENCE OF PHOTOLUMINESCENCE IN GaAS/AlGaAS ASYMMETRIC COUPLED DOUBLE QUANTUM WELLS STRUVTURE[J].Journal of Infrared and Millimeter Waves,1994,13(1):77-80. |
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| Authors: | Xu Shijie Liu Jian Li Guohu Zheng Houzhi Jiang Desheng |
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| Abstract: | Photoluminescence spectra at various temperatures of GaAs/AlGaAs asymmetric coupled double quantum wells pin structure are reported. Different temperature dependence of heavy-hole excitonic peaks intensity in narrow-and wide-well was observed.The results show that the thermionic emission of the electrons in the narrow-well results in more rapid decreasing of the luminescence intensity. The special temperature dependence of light-hole excitonic peaks intellsity in the wide-well and its mechanism were studied, too. |
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| Keywords: | photoluminescence GaAs/AlGaAs quantum well temperature dependence |
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