透射式GaAs（Cs,O）光电阴极发射电子横向能量的研究

制备了透射式ＧａＡｓ阴极组件，测量了ＧａＡｓ阴极激活过程中阴极光 敏度和发射电子平均横向能量随激活时间的变化，用扫描电镜观察ＧａＡｓ（Ｃｓ，Ｏ）阴极表面形貌，结果表明：ＧａＡｓ（Ｃｓ，Ｏ）阴极发射电子横向能量取决于ＧａＡｓ晶格温度、阴极表面形貌和电子在能带弯曲区的多次散射，与（Ｃｓ，Ｏ）激活层无关。

TRANSVERSE ENERGY OF PHOTOELECTRONS EMITTED FROM TRANSMISSION MODE GaAs(Cs,O) PHOTOCATHODES

A GaAs transmission photocathode structure was prepared.The variations of the cathode photosensitivity and mean transverse energy through the course of typical activations were measured systematically in the photocathode activation and imaging system. The GaAs(Cs,O) photocathode surface was examined by scanning electron microscope. It was concluded that the transverse energy of photoelectrons emitted from GaAs(Cs,O) photocathodes, which is largely independent of the (Cs,O) activation layer, is determined by the GaAs lattice temperature, photocathode surface roughness and multiple scattering processes in the band bending region.