负偏置温度不稳定性导致单粒子瞬态脉冲的压缩与展宽

摘要：本文基于3D TCAD 器件模拟，研究了130nm体硅工艺下，负偏置温度不稳定性（NBTI）对单粒子瞬态（SET）脉冲的影响。研究结果表明：当粒子轰击高输入反相器的PMOS管时，NBTI能够导致所产生的SET脉冲的宽度和幅度随时间不断压缩，当粒子轰击低输入反相器的NMOS管时，NBTI能够导致所产生的SET脉冲的宽度和幅度随时间不断展宽。基于研究结果，本文首次提出：NBTI对粒子轰击NMOS管所产生的SET脉冲的影响已经十分严重，在进行抗辐照加固设计时必须考虑NBTI所造成的影响。

Negative bias temperature instability induced single event transient pulse narrowing and broadening

The effect of negative bias temperature instability (NBTI) on a single event transient (SET) has been studied in a 130 nm bulk silicon CMOS process based on 3D TCAD device simulations. The investigation shows that NBTI can result in the pulse width and amplitude of SET narrowing when the heavy ion hits the PMOS in the high-input inverter; but NBTI can result in the pulse width and amplitude of SET broadening when the heavy ion hits the NMOS in the low-input inverter. Based on this study, for the first time we propose that the impact of NBTI on a SET produced by the heavy ion hitting the NMOS has already been a significant reliability issue and should be of wide concern, and the radiation hardened design must consider the impact of NBTI on a SET.