| 对掺Te的GaP:N中2.268eV发光带的再认识(英文) |
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| 引用本文： | 钱佑华,丁磊,吴仲墀.对掺Te的GaP:N中2.268eV发光带的再认识(英文)[J].固体电子学研究与进展,1989(4). |
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| 作者姓名： | 钱佑华 丁磊 吴仲墀 |
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| 作者单位： | 复旦大学
(钱佑华，丁磊)，复旦大学(吴仲墀) |
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| 摘 要： |
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A Reexamination to the Formation of Luminescence Around 2.268eV in GaP:N Doped with Te |
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| Abstract: | The emission band around 2.268eV on the low temperature photolumi-nescence spectra of GaP:N doped with tellurium has been reexamined under the condition of very high resolution. It is suggested that the structure of the band may be composed of the LO phonon replica of isolated nitrogen bound excitons, the phonon-assisted emission from excitons bound to the excited states of NN1 pairs and the satellite line emitting from excitons bound to the neutral Te donors. |
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