| 溅射Ar+能量对离子束溅射制备Ge薄膜结晶性的影响 |
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| 引用本文： | 宋超,杨瑞东,冯林永,陈寒娴,邓荣斌,王国宁,杨宇.溅射Ar+能量对离子束溅射制备Ge薄膜结晶性的影响[J].功能材料,2007,38(6):931-933. |
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| 作者姓名： | 宋超 杨瑞东 冯林永 陈寒娴 邓荣斌 王国宁 杨宇 |
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| 作者单位： | 云南大学,材料科学与工程系,云南,昆明,650091 |
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| 摘 要： | 采用离子束溅射技术在不同Ar 能量下溅射Ge单层膜.用Raman光谱和AFM图谱对薄膜进行表征,得到Ge薄膜结晶性和晶粒大小随Ar 能量变化的波动性关系.在0.6keV的Ar 能量下,得到晶粒较小的Ge晶化薄膜,0.8keV能量下,Ge薄膜为非晶结构,1.0keV能量下,得到晶粒较大的Ge晶化薄膜.通过对沉积原子数与沉积原子能量的分析,解释了这一波动性变化.
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| 关 键 词： | 离子束溅射 Ge薄膜 Ar 能量 结晶性 |
| 文章编号： | 1001-9731（2007）06-0931-03 |
| 修稿时间： | 2006-12-062007-01-25 |
Influence of Ar+ energy on the crystalline property of Ge films fabricated by ion beam sputtering |
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| SONG Chao,YANG Rui-dong,FENG Lin-yong,CHEN Han-xian,DENG Rong-bin,WANG Guo-ning,YANG Yu.Influence of Ar+ energy on the crystalline property of Ge films fabricated by ion beam sputtering[J].Journal of Functional Materials,2007,38(6):931-933. |
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| Authors: | SONG Chao YANG Rui-dong FENG Lin-yong CHEN Han-xian DENG Rong-bin WANG Guo-ning YANG Yu |
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| Affiliation: | Department of Material Science and Engineering, Yunnan University, Kunming 650091 ,China |
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| Abstract: | A series of germanium single films were fabricated by ion beam sputtering at different Ar+ energy.These films were characterized using Raman scattering and AFM spectra.It is found that the crystalline property and crystal grain size of the germanium films fluctuate following Ar+ energy.When the Ar+ energy is 0.6keV,the crystal grain has smaller size.When the Ar+ energy is 0.8keV,the amorphous film is obtained.When the Ar+ energy is 1.0keV,the crystal grain has bigger size.The waved change of the crystal grain size is explained as the influence of the number and energy of the germanium atoms deposited at different Ar+ energy. |
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| Keywords: | ion beam sputtering Ge film Ar+ energy crystalline |
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