Fabrication of 200-GHz fmax resonant-tunnelingdiodes for integration circuit and microwave applications |
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| Authors: | Diamond S.K. Ozbay E. Rodwell M.J.W. Bloom D.W. Pao Y.C. Wolak E. Harris J.S. |
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| Affiliation: | Stanford Univ., CA; |
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| Abstract: | Room-temperature current densities of 1.3×105 A/cm2 and peak-to-valley ratios of 2.5 have been achieved for resonant tunneling diodes (RTDs) in the GaAs/AlAs material system. The devices were fabricated in a microwave-compatible process using topside contacts and a semi-insulating substrate to allow device integration. Proton implantation creates a nonconducting surface compatible with high-frequency coplanar transmission lines and other passive microwave structures |
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