Microstructure and mechanical properties of reactively sputtered Ti–Si–N nanocomposite films |
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| Affiliation: | 1. Department of Energy Material and Technology, General Research Institute for Nonferrous Metals, Beijing 100088, China;2. School of Engineering and Technology, China University of Geosciences (Beijing), Beijing 100083, China;1. State Key Laboratory of Advanced Welding and Joining, Harbin Institute of Technology, Harbin 150001, China;2. Key Laboratory of Micro-systems and Micro-structures Manufacturing, Ministry of Education, Harbin Institute of Technology, Harbin 150080, China;3. Delta Power Electronics Center, Delta Electronics (Shanghai) Co., Ltd., Shanghai201209, China;1. Surface Engineering Institute, University of Science and Technology Liaoning, China;2. Surface Engineering Group, Manchester Metropolitan University, China;1. School of Metallurgical and Ecological Engineering, University of Science and Technology Beijing (USTB), Beijing 100083, China;2. Department of Materials Science and Engineering, University of Ghana, Legon, Accra, Ghana |
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| Abstract: | A series of Ti–Si–N nanocomposite films with different Si content were deposited by reactive sputtering in a gas mixed with Ar, N2 and SiH4. Energy dispersive spectroscope, X-ray diffraction, transmission electron microscope and nanoindentation technique were employed to characterize the microstructure and mechanical properties of the films. The results reveal that Ti–Si–N nanocomposite films with different Si content can be easily obtained by controlling SiH4 partial pressure in the mixed gas. With Si content ranging from 4 at.% to 9 at.%, the films are strengthened and reach the highest hardness and elastic modulus of 34.2 GPa and 398 GPa, respectively. With a further increase of Si content, the mechanical properties of films decrease gradually. The microstructure of Ti–Si–N films with high hardness shows the existence of TiN nanocrystals surrounded by Si3N4 interphase. The grain size of TiN is about 20 nm and the thickness of Si3N4 interphase is less than 1 nm. |
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