| Abstract: | Highly manufacturable partially insulated field-effect transistors (PiFETs) were fabricated by using Si-SiGe epitaxial growth and selective SiGe etch process. Owing to these technologies, pseudo-silicon-on-insulator (SOI) structures, partially insulating oxide (PiOX) under source/drain (PUSD) and PiOX under channel (PUC), could be easily realized with excellent structural and process advantages. We are demonstrating their preliminary characteristics and properties. Especially, in the PUSD PiFET, junction capacitance, leakage current, and DIBL in bulk devices could be reduced and the floating body problem in SOI devices was also cleared without any area penalty. Thus, this PiFET structure can be a promising candidate for the future DRAM cell transistor. |
