| CMOS集成温度传感器中的器件模型分析 |
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| 引用本文： | 熊琦,曾健平,彭伟,曾云.CMOS集成温度传感器中的器件模型分析[J].电子与封装,2006,6(7):32-35. |
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| 作者姓名： | 熊琦 曾健平 彭伟 曾云 |
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| 作者单位： | 1. 湖南工程职业技术学院,长沙,410015;湖南大学应用物理系,长沙,410082
2. 湖南大学应用物理系,长沙,410082 |
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| 摘 要： | 根据CMOS集成温度传感器对器件的要求,对MOS器件的亚阈值模型和MOS工艺下的双极型器件进行了分析对比,选用后者更适合作为CMOS集成温度传感器的器件,并对衬底PNP管压电结型效应对温度传感器的影响进行了分析,最后对不同类型电阻进行了分析对比,为CMOS集成温度传感器设计打下了理论基础。
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| 关 键 词： | 集成温度传感器 亚阈值模型 压电结型效应 电阻 |
| 文章编号： | 1681-1070（2006）07-0032-04 |
| 收稿时间： | 2006-03-08 |
| 修稿时间： | 2006年3月8日 |
The Analysis of Device-Model in CMOS Integrated Temperature Sensor |
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| XIONG Qi,ZENG Jian-ping,PENG Wei,ZENG Yun.The Analysis of Device-Model in CMOS Integrated Temperature Sensor[J].Electronics & Packaging,2006,6(7):32-35. |
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| Authors: | XIONG Qi ZENG Jian-ping PENG Wei ZENG Yun |
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| Affiliation: | 1.Institute of Hunan Engineering Profession ;2.Department of Applied Physics, Hunan Technology, Changsha 410015, China; University, Changsha 410082, China |
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| Abstract: | According to the command to devices in CMOS integrated temperature sensor, the subthreshold model and bipolar model of MOS devices were analyzed comparatively. In the result, the later was chosen for its more advantages. In addition, the influence of substrate PNP transistor to temperature sensor was analyzed. In the end, varies resistors were analyzed comparatively. All of above make the theory foundation of the design of temperature sensor. |
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| Keywords: | integrated temperature sensor subthreshold mode effect of piezo-junction resistor |
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