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基于GaAs pHEMT 2.5~4.3 GHz驱动功率放大器芯片设计
引用本文:林倩,胡单辉,邬海峰,陈思维.基于GaAs pHEMT 2.5~4.3 GHz驱动功率放大器芯片设计[J].重庆邮电大学学报(自然科学版),2022,34(1):73-77.
作者姓名:林倩  胡单辉  邬海峰  陈思维
作者单位:青海民族大学 物理与电子信息工程学院,西宁810007,成都嘉纳海威科技有限责任公司,成都610073
基金项目:国家自然科学基金(62161046);中国科学院西部青年学者西部之光项目(1_14);青海省自然科学基金面上项目(2021-ZJ-910);青海民族大学研究生创新项目(10M2021001)
摘    要:为了实现低噪声、高线性度、中功率的指标特性,设计了一款基于GaAs pHEMT工艺的2.5~4.3 GHz驱动功率放大器(power amplifier,PA),该PA设计采用共源共栅级驱动共源极放大器的双级放大结构,其中共源共栅级驱动放大器可实现良好的隔离度,采用负反馈技术实现输入阻抗匹配和级间阻抗匹配,选取共源极放大器实现高线性度指标。经过流片加工后,实测结果显示,该PA在2.5~4.3 GHz频段可实现25.5±1 dB小信号增益,可以满足5G无线通信系统中Sub-6G频段的典型驱动功率放大器的指标要求,具有广泛的市场应用前景。

关 键 词:GaAs  pHEMT  MMIC  PA  共源共栅  负反馈  高增益
收稿时间:2020/11/3 0:00:00
修稿时间:2021/12/2 0:00:00

Design of 2.5~4.3 GHz GaAs pHEMT drive power amplifier chip
LIN Qian,HU Danhui,WU Haifeng,CHEN Siwei.Design of 2.5~4.3 GHz GaAs pHEMT drive power amplifier chip[J].Journal of Chongqing University of Posts and Telecommunications,2022,34(1):73-77.
Authors:LIN Qian  HU Danhui  WU Haifeng  CHEN Siwei
Affiliation:College of Physics and Electronic Information Engineering, Qinghai University for Nationalities, Xining 810007, P. R. China;Chengdu Ganide Technology Co., Ltd, Chengdu 610073, P. R. China
Abstract:Based on the GaAs pHEMT process, a 2.5~4.3 GHz drive power amplifier (Power Amplifier, PA) is designed. In order to achieve low noise, high linearity and medium power, the PA is designed with a double-stage amplifier driven by Cascode amplifier. Among them, the Cascode drive amplifier can achieve good noise coefficient and isolation degree, and at the same time, the input impedance and the impedance matching between stages can be realized by the negative feedback technology, the common source amplifier is selected to achieve high linearity. After tape-out processing, the measured results show that the PA can be achieved a small signal gain of 25.5±1 dB. The measured results of the chip can meet the index requirements of the typical driving power amplifier in the sub-6G band of 5G wireless communication system, and it has a broad market application prospect.
Keywords:GaAs pHEMT  MMIC PA  cascode  negative feedback  high gain
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