Si基InSb红外焦平面阵列探测器的研究

针对InSb 红外焦平面芯片中InSb 与Si 读出电路热膨胀系数不匹配导致芯片龟裂及铟柱断裂现象，开展了Si基InSb 红外焦平面探测器（FPA）的研究。运用磨抛减薄技术及金刚石点切削技术对芯片背面进行精确减薄，得到厚度为15m的InSb芯片；研究了在InSb芯片和Si片上溅射及蒸发减反膜工艺，得到InSb芯片和Si片粘贴后红外中短波光谱的透过率高达88%；对器件的整体工艺路线进行了探索，最终制备出Si基128128元InSb 红外焦平面探测器器件，测试结果表明:器件探测率、响应率及串音等性能指标达到传统工艺制备的器件性能指标；经温冲试验后测试器件结构保持完好，性能未发生变化，证明该工艺路线可解决芯片受应力冲击而产生的铟柱断裂及芯片龟裂的现象，可有效提高InSb焦平面探测器芯片的成品率。

InSb infrared focal plane arrays detector based on Si wafer

The thermal expansion coefficient mismatch between InSb chips and silicon readout circuits was one of the prime reasons for cracking and indium column chip breakage, which carried out research InSb infrared Focal Plane Arrays (FPA) detectors banding on Si wafer. It used the technology of grinding, polishing thinning and the point cutting of diamond to cutting precisely on the backside of the chips, which on the purpose to have chips with a thickness of 15 m. The transmittance of infrared spectral obtained was higher than 88% in medium-short wavelength. The result shows that most of the important performance such as detectivity and responsivity of FPA under the bonding technique are equal to traditional structure FPA. Furthermore, the performance of these FPA doesn't degress after temperature shock experiment, which proves that the Si-bonding technology can solve the problem brought out by indium columns breakage of impact stresses, which plays a dominant role in the yield of InSb infrared focal plane arrays detectors.