| 2～12GHz GaAs单片行波放大器 |
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| 引用本文： | 宋山松,林金庭.2～12GHz GaAs单片行波放大器[J].固体电子学研究与进展,1994,14(4):297-301. |
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| 作者姓名： | 宋山松 林金庭 |
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| 作者单位： | 南京电子器件研究所 |
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| 摘 要： | 报道了一个全平面超宽带ＧａＡｓ单片行波放大器的研究结果。该单片电路的核心部件是四个３００μｍ栅宽的ＭＥＳＦＥＴ，整个电路拓扑结构简单，芯片面积为３．０ｍｍ×１．８ｍｍ。电路经优化设计后在２～１２ＧＨｚ范围内，小信号增益为５±１ｄＢ，输入输出电压驻波比≤１．７５。上述频率范围内输出功率≥１６ｄＢｍ，噪声系数≤８ｄＢ。采用全离子注入、全平面工艺，均匀性、一致性良好。实验结果与设计预计值十分一致。
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| 关 键 词： | 微波单片集成电路，行波放大器，带宽 |
A 2-12 GHz GaAs Monolithic Traveling-wave Amplifier |
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| Song Shansong,Lin Jiming,Guo Changning,Chen Kejin.A 2-12 GHz GaAs Monolithic Traveling-wave Amplifier[J].Research & Progress of Solid State Electronics,1994,14(4):297-301. |
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| Authors: | Song Shansong Lin Jiming Guo Changning Chen Kejin |
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| Abstract: | A multi-octave GaAs monolithic MESFET traveling-wave amplifier (TWA MMIC) has been designed and fabricated. Experimental results of the TWA MMIC are discussed. The ion implantation technology results in a good uniformity of the circuit performance. The measured small-signal gain is 5± 1 dB from 2-12GHz. The input and output VSWR are all less than 1. 75. The TWA MMIC has output power of 16 dBm and noise figure of less than 8 dB. The TWA MMIC is consist of 4 GaAs MESFETs,each FET has a gate periphery of 300 pm. The chip size is 3. 0mm ×1. 8 mm. |
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| Keywords: | MMIC TWA Bandwidth |
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