Ion implanted GaAs varactor diodes: capacitance uniformity |
| |
| Authors: | Toyoda Nobuyuki Niikura Ikuo Shimura Yasuo Hozuki Toshitaka Sugibuchi Hisashi Mihara Minoru Hara Tohru |
| |
| Affiliation: | Matsushita Research Institute Tokyo Inc., Kawasaki, Japan; |
| |
| Abstract: | Gallium arsenide varactor diodes with low series resistance (~0.25 ?) for u.h.f. t.v. tuners are developed. Uniformity and reproducibility of diode capacitance is improved markedly by using improved ion implantation and l.p.e. techniques. The standard deviation of diode capacitance distribution is 0.74% at V = 3.0 V within a wafer. A good r.f. tracking characteristic can be obtained in varactor tuners. |
| |
| Keywords: | |
|
