| 大尺寸硅酸铋晶体的原料合成、晶体生长及闪烁性能研究 |
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| 引用本文： | 徐家跃,王 杰,陈 炜,肖学峰,杨波波,王占勇,李 飞,谢会东.大尺寸硅酸铋晶体的原料合成、晶体生长及闪烁性能研究[J].无机材料学报,2016,31(10):1147-1150. |
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| 作者姓名： | 徐家跃 王 杰 陈 炜 肖学峰 杨波波 王占勇 李 飞 谢会东 |
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| 作者单位： | (1. 上海应用技术大学 材料科学与工程学院, 上海201418; 2. 北方民族大学 物理系, 银川 750021; 3. 西安建筑科技大学 理学院, 西安710055) |
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| 摘 要： | 以Si(OC2H5)4和Bi(NO3)3·5H2O作为前驱体、柠檬酸作为溶剂, 按化学计量比配料, 采用溶胶-凝胶法合成并经高温烧结制备了纯相Bi4Si3O12多晶粉末, 每批次可合成250 g。以此为原料、<001 >取向BSO为籽晶, 在坩埚下降炉内生长了BSO晶体, 讨论了晶体的析晶行为, 获得了30 mm × 30 mm × 210 mm的高质量BSO晶体。闪烁性能测试表明, 该晶体能量分辨率为18.9%, 光输出为同等条件下CSI(T1)晶体的7.2%。
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| 关 键 词： | 溶胶-凝胶法 硅酸铋晶体 坩埚下降法 晶体生长 闪烁性能 |
| 收稿时间： | 2016-01-27 |
Synthesis,Growth and Scintillation Properties of Large Size Bi4Si3O12 Crystals |
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| XU Jia-Yue,WANG Jie,CHEN Wei,XIAO Xue-Feng,YANG Bo-Bo,WANG Zhan-Yong,LI Fei,XIE Hui-Dong.Synthesis,Growth and Scintillation Properties of Large Size Bi4Si3O12 Crystals[J].Journal of Inorganic Materials,2016,31(10):1147-1150. |
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| Authors: | XU Jia-Yue WANG Jie CHEN Wei XIAO Xue-Feng YANG Bo-Bo WANG Zhan-Yong LI Fei XIE Hui-Dong |
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| Affiliation: | (1. Institute of Crystal Growth, School of Materials Science and Engineering, Shanghai Institute of Technology, Shanghai 201418, China; 2. Department of Fundamental Science, Beifang University of Nationalities, Yinchuan 750021, China; 3. School of Science, Xi’an University of Architecture and Technology, Xi’an 710055, China) |
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| Abstract: | Using stoichiometric Si(OC2H5)4 and Bi(NO3)3·5H2O as precursors and citric acid as solvent, polycrystalline Bi4Si3O12 (BSO) powders were synthesized by Sol-Gel method and sintered at high temperature. Batch production of 250 g powders was realized. Using as-synthesized BSO powders and <001>-oriented BSO seeds, BSO crystals were grown in the vertical Bridgman furnace. The crystallization behavior was discussed and high quality BSO crystal up to 30 mm × 30 mm × 210 mm was obtained. The scintillation characteristics of BSO single crystals were investigated. The energy resolution of the BSO crystal was 18.9% and the relative light yield of the crystal was 7.2% compared with CsI(Tl) at the same conditions. |
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| Keywords: | Sol-Gel method Bi4Si3O12 crystal vertical Bridgman method crystal growth scintillation property |
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