Low-power phototransceiver arrays with vertically integratedresonant-cavity LEDs and heterostructure phototransistors |
| |
Authors: | Weidong Zhou Pradhan S Bhattacharya P Liu WK Lubyshev D |
| |
Affiliation: | Dept. of Electr. Eng. & Comput. Sci., Michigan Univ., Ann Arbor, MI; |
| |
Abstract: | Low-power phototransceivers and phototransceiver arrays, with vertically integrated high-gain heterojunction phototransistors (HPTs) and resonant-cavity light-emitting diodes (RCLEDs), are demonstrated. A tunnel junction was used as a low resistance interconnect between the two devices. The input and output wavelengths are 0.63-0.85 and 0.98 μm, respectively. The phototransceiver exhibits an optical gain of 13 dB and power dissipation of 400 μW for an input power of 5 μW. The phototransceiver arrays demonstrate good uniformity, low optical crosstalk, and imaging capabilities |
| |
Keywords: | |
|
|