| 用于KrF准分子激光光刻的三相移掩模 |
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| 引用本文： | 孙方,侯德胜.用于KrF准分子激光光刻的三相移掩模[J].光电工程,2000,27(5):27-30. |
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| 作者姓名： | 孙方 侯德胜 |
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| 作者单位： | [1]中国科学院光电技术研究所微细加工光学技术国家重点实验室 [2]中国科学院光电技术研究所微细加工光学技术国家重 |
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| 基金项目： | 中国科学院重点项目!(AK970 4)，中国科学院光电技术研究所微细加工光学技术国家重点实验室基金资助项目!(KF S990 2 ) |
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| 摘 要： | 讨论了相移掩模提高光刻分辨力的基本原理，提出了一种抗蚀剂相移器制作衰减相移掩模的新方法，利用自行设计、建立的ＫｒＦ准分子激光投影光刻实验曝光系统进行了实验研究，给出了实验结果，并与传统光刻方法作了比较。
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| 关 键 词： | 准分子光刻 相移掩模 图形分辨力 激光光刻 |
| 修稿时间： | : |
The Attenuated Phase-Shifting Mask for KrF Excimer Laser Photolithography |
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| SUN Fang,HOU De-sheng,FENG Bo-ru,ZHANG Jin.The Attenuated Phase-Shifting Mask for KrF Excimer Laser Photolithography[J].Opto-Electronic Engineering,2000,27(5):27-30. |
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| Authors: | SUN Fang HOU De-sheng FENG Bo-ru ZHANG Jin |
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| Abstract: | The basic principle for improving photolithography resolution of phase-shifting mask is discussed and a new method for manufacturing attenuated phase-shifting mask with photoresist shifter is proposed.Experimental research in carried out by means of projection photolithography experimental system with KrF excimer laser designed and built by ourselves.The experimental results are given and a comparison with the traditional photolithography methods is carried out. |
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| Keywords: | Excimer lithography Phase-shifting mask Pattern resolut ion |
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