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(Ag2Se)1-x(Bi2Se3)x的热电性能研究
引用本文:刘虹霞,李文,张馨月,李娟,裴艳中.(Ag2Se)1-x(Bi2Se3)x的热电性能研究[J].无机材料学报,2019,34(3):341-348.
作者姓名:刘虹霞  李文  张馨月  李娟  裴艳中
作者单位:1. 同济大学 材料科学与工程学院, 材料交叉学科研究中心, 上海 201804; 2. 中国科学院 上海硅酸盐研究所, 高性能陶瓷与超微结构国家重点实验室, 上海 200050; 3. 中国科学院大学, 北京 100049
摘    要:具有本征低晶格热导率的I-V-VI2族三元硫属化合物在热电领域引起了广泛关注。AgBiSe2作为这类化合物中少有的n型半导体, 成为一种有潜力的热电材料。本工作系统研究了AgBiSe2的热电性能。基于Ag2Se-Bi2Se二元相图, 单相的(Ag2Se)1-x(Bi2Se3)x的成分在x=0.4~0.62范围可调, 使得该材料载流子浓度具有可调性。结果表明, 通过组分调控获得了较宽范围的载体浓度1.0×1019~5.7×1019 cm-3, 并基于声学声子散射的单一抛物带模型对其电传输性能进行了综合评估。本研究获得的最高载流子浓度接近理论最优值, 在700 K实现了最高ZT值0.5。本研究有助于深入理解AgBiSe2的传输特性和决定热电性能的基本物理参数。

关 键 词:热电材料  热电性能  AgBiSe2  载流子浓度  SPB模型  
收稿时间:2018-05-30

Thermoelectric Properties of (Ag2Se)1-x(Bi2Se3)x
LIU Hong-Xia,LI Wen,ZHANG Xin-Yue,LI Juan,PEI Yan-Zhong.Thermoelectric Properties of (Ag2Se)1-x(Bi2Se3)x[J].Journal of Inorganic Materials,2019,34(3):341-348.
Authors:LIU Hong-Xia  LI Wen  ZHANG Xin-Yue  LI Juan  PEI Yan-Zhong
Affiliation:1. Interdisciplinary Materials Research Center, School of Materials Science and Engineering, Tongji University, Shanghai 201804, China;
2. State Key Laboratory of High Performance Ceramics and Superfine Microstructures, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai 200050, China;
3. University of Chinese Academy of Sciences, Beijing 100049, China;
Abstract:Ternary chalcogenides I-V-VI2 compounds attract extensive attentions for thermoelectric applications due to their intrinsically low lattice thermal conductivity. AgBiSe2, as one of a few n-type semiconductors among these compounds, shows the potential to be a promising thermoelectric material. Therefore, this work focuses on its thermoelectric properties. According to the phase diagram of Ag2Se-Bi2Se3 system, the single phase region of (Ag2Se)1-x(Bi2Se3)x allows x to be varied in the range of 0.4~0.62. This large variation of x suggests a tunability of carrier concentration for this material. A broad carrier concentration of 1.0×1019~5.7×1019 cm-3 for single phased (Ag2Se)1-x(Bi2Se3)x is obtained through a composition manipulation, which enables a comprehensive assessment on electronic transport properties based on a single parabolic band model with acoustic scattering. The highest carrier concentration obtained in this work, approaching to the theoretical optimal one, leads to a peak ZT of 0.5 at 700 K. This work offers a well understanding of its transport properties and underlying physical parameters determining the thermoelectric performance.
Keywords:thermoelectric material  thermoelectric properties  AgBiSe2  carrier concentration  SPB model  
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