Hydrogen sensing properties of a Pd/oxide/InAlAs metamorphic-based transistor |
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| Authors: | Tsung-Han Tsai Huey-Ing Chen Tai-Yu Chen Li-Yang Chen Yi-Jung Liu Chien-Chang Huang Kai-Siang Hsu Wen-Chau Liu |
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| Affiliation: | 1. Institute of Microelectronics, Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC;2. Department of Chemical Engineering, National Cheng-Kung University, 1 University Road, Tainan 70101, Taiwan, ROC |
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| Abstract: | A Pd/oxide/InAlAs metal–oxide–semiconductor (MOS) type metamorphic high electron mobility transistor (MHEMT)-based hydrogen sensor is fabricated and investigated. In comparison with the conventional HEMT-based sensors, the MOS MHEMT-based sensor exhibits significantly high sensitivity to the hydrogen. The found hydrogen sensing response is as high as 300%. Using the thermodynamic analysis to estimate the enthalpy value of hydrogen adsorption, the value for the proposed sensor is much lower than that for the other reported HEMT-based sensors. The MHEMT-based sensors are demonstrated to have a relatively fast response as comparing to other HEMT-based ones. The response time of the device is approximately 10 s under exposure to a 1% H2/air gas. Consequently, the performance of the studied sensors shows the promise characteristics for practical applications. |
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| Keywords: | Pd Oxide Hydrogen MHEMT |
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