| RIE对Ge衬底上制备亚波长结构形貌的影响 |
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| 引用本文： | 郑倩,刘正堂,李阳平,张淼,车兴森.RIE对Ge衬底上制备亚波长结构形貌的影响[J].半导体技术,2010,35(6):527-530. |
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| 作者姓名： | 郑倩 刘正堂 李阳平 张淼 车兴森 |
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| 作者单位： | 西北工业大学,材料学院,西安710072;西北工业大学,材料学院,西安710072;西北工业大学,材料学院,西安710072;西北工业大学,材料学院,西安710072;西北工业大学,材料学院,西安710072 |
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| 基金项目： | 航空科学基金资助项目 |
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| 摘 要： | 利用反应离子刻蚀(RIE)技术在Ge衬底上制备宽波段亚波长结构,研究了不同SF6/O2比例条件下在不同刻蚀时间、压强和射频功率对结构形貌及刻蚀深度的影响,并用SEM对刻蚀图形的表面形貌进行了观察.结果表明,SF6易与衬底发生反应,生成挥发性产物,加速了刻蚀速度.O2的加入生成的钝化膜会增强各向异性刻蚀,减慢了刻蚀速度,对衬底有刻蚀保护作用.增加压强可以增大刻蚀深度,但增加射频功率,刻蚀深度先是增加,达到一定值后下降.选择合适的工艺参数可以获得较为理想的金字塔形结构.
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| 关 键 词： | 反应离子刻蚀 亚波长结构 挥发性产物 钝化膜 各向异性 |
Influence of RIE Process Parameters on the Morphology of Sub-Wavelength Structure on Ge Substrate |
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| Zheng Qian,Liu Zhengtang,Li Yangping,Zhang Miao,Che Xingsen.Influence of RIE Process Parameters on the Morphology of Sub-Wavelength Structure on Ge Substrate[J].Semiconductor Technology,2010,35(6):527-530. |
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| Authors: | Zheng Qian Liu Zhengtang Li Yangping Zhang Miao Che Xingsen |
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| Affiliation: | Zheng Qian,Liu Zhengtang,Li Yangping,Zhang Miao,Che Xingsen(School of Materials Science,Northwestern Poly-Technical University,Xi'an 710072,China) |
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| Abstract: | Sub-wavelength structures were prepared on Ge substrate using reactive ion etching(RIE) technology.Influences of SF6/O2 ratio,etching time,working gas pressure and RF power on the etching depth are studied systematically.Surface topography of the etched patterns is observed by using SEM.Results show that SF6 reacts preferentially with the substrate to produce volatile products,accelerating the etching rate of the substrate and the removal rate of the photoresist.Additive O2 enhances the anisotropic etching,... |
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| Keywords: | reactive ion etching sub-wavelength structures volatile products passive film anisotropy |
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