| 用于高温压力传感器的AIN绝缘膜的研究 |
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| 引用本文： | 李辉,孙以材,潘国锋,邱美艳.用于高温压力传感器的AIN绝缘膜的研究[J].半导体技术,2006,31(10):778-781. |
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| 作者姓名： | 李辉 孙以材 潘国锋 邱美艳 |
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| 作者单位： | 河北工业大学信息工程学院,天津300130 |
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| 摘 要： | 采用直流磁控反应溅射法制备了高温压力传感器用的AIN薄膜。用X射线衍射对薄膜的晶向结构进行了分析，研究了薄膜的绝缘特性和化学稳定性，分析了AIN与Si的热膨胀系数、热导系数的关系。选用AIN在力敏电阻条和硅弹性膜之间进行绝缘隔离，由于无p-n结，力敏电阻无反向漏电，得到了极好的压力传感器特性，即零点电漂移及热漂移小及非线性小。
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| 关 键 词： | 氮化铝薄膜 高温压力传感器 直流磁控反应溅射 |
| 文章编号： | 1003-353X(2006)10-0778-04 |
| 收稿时间： | 2006-05-10 |
| 修稿时间： | 2006年5月10日 |
Study of AIN Insulated Film for High Temperature Pressure Sensor |
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| LI Hui, SUN Yi-cai, PAN Guo-feng, QIU Mei-yan.Study of AIN Insulated Film for High Temperature Pressure Sensor[J].Semiconductor Technology,2006,31(10):778-781. |
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| Authors: | LI Hui SUN Yi-cai PAN Guo-feng QIU Mei-yan |
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| Affiliation: | School of Electronics and Information Engineering, Hebei University of Technology, Tianjin 300130, China |
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| Abstract: | AlN thin films for high temperature pressure sensor were successfully deposited by DC magnetron reactive sputtering. Crystalline orientation of the film was analyzed by X-ray diffraction. The insulation characteristics and the chemical steability of AlN thin film were investigated. The relation of the expansion coefficient and thermal conductivity between AlN and Si were discussed. Excellent properties (electric and thermal drift for offset, non-linearity) of the pressure sensor fabri- cated by AlN film were obtained. |
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| Keywords: | AIN thin film high temperature pressure sensor DC magnetron reactive sputtering |
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